Capelle a/d IJssel, 21 december 2004 – Toshiba Corporation recently announced a new method for suppressing thermal instability and current leakage in MOS transistors that supports advanced CMOS fabrication at 45-nanometer gate lengths and beyond. The new technology will contribute to the continued application of CMOS technology to future generations of LSI.
The conventional NiSi layer in a shallow junction is thermally unstable; subjecting the layer to heat results in large current leakage. Toshiba has developed a method to suppress this thermal instability that is based on implanting fluorine ion into the surface prior to the formation of the NiSi layer. This solution directly addresses a significant problem in the LSI manufacturing process, and offers a solution for advanced CMOS fabrication with NiSi.
The new method also offers a cost-effective solution, since implantation of fluorine ion can be done with current manufacturing equipment and produces no adverse side effects in the manufacturing process, such as sharp increase of sheet resistance.
As lower power consumption while delivering greater performance is a prerequisite for advanced MOS transistors, especially process technology at 45 nanometer and beyond, Toshiba plans to incorporate the new method into 45-nanometer LSI fabrication process.
Over Toshiba
Toshiba Information Systems Benelux is een dochteronderneming van de Computer Systems Division van Toshiba Europe GmbH, leverancier van portable computers. Voor meer informatie zie www.computers.toshiba.nl.
Het moederbedrijf, Toshiba Corporation, nummer 8 op de wereldranglijst van computer en electronica bedrijven, is toonaangevend fabrikant van informatie- en communicatiesystemen, elektronische componenten, consumentenproducten, medische apparatuur en power systems. Integratie van de betreffende divisies verzekert het bedrijf van een positie als innovator op het gebied van geavanceerde componenten, producten en systemen. Toshiba heeft wereldwijd meer dan 161.000 medewerkers en de jaaromzet bedraagt ruim 53 miljard US$ (2003).